產品簡介
電阻率厚度測試儀 產品型號：進口 The system consists of the measuring head, an electronic rack linked by one standard cable
公司簡介
北京羲和陽光科技發展有限公司是一家新能源科技公司，致力于太陽能光伏產業。提供光伏生產所用硅料的分選、檢驗、檢測設備及相關設備配件，幫助您識別高質量的硅料，減少采購或銷售的風險。
我公司經營的主要產品有：硅料分選測試儀（電阻率，PN型識別）、電阻測試儀、排重摻測試儀、少子壽命測試儀、測厚儀、碳氧磷硼含量測試儀，表面線痕測試儀，光譜橢偏儀，透過率測試儀、相關產品配件，以及鎵摻雜劑、母合金摻雜劑，異丙醇，雙氧水等耗材。
羲和的名稱來源于中國的太陽神羲和女神，作為太陽能光伏產業的一份子，為提高太陽能電池生產過程的可控性，最大限度的減少過程風險，羲和科技在不懈追求、積極探索，我們深感肩頭的重任，我們會倍加努力，持之以恒，給您提供最優質的產品、最優惠的價格和最滿意的服務。
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產品說明
電阻率厚度測試儀
產品型號：進口
The system consists of the measuring head, an electronic rack linked by one standard cable with 25-pin D-connector and a PC.
功能特點
To allow three thickness scans during belt transport at different wafer sizes, two measuring
bars, one from top and one from bottom, hold 3 sensors each. The outer sensors pairs left
and right are mounted on a linear sledge and can be moved simultaneously equidistant to
the center by means of a manually moved lever.
Before and behind of each capacitive sensor are light barriers to validate the measurements
of a sensor only if both are covered. This assures safe measurements even with different
wafer forms or misalignments. To ensure safe start and finish of measurement the light
barriers have to be uncovered between two incoming wafers. Therefore the wafers must be
at least 30mm apart.
Optionally a one-scan resistivity measurement can be added within the same case, as well
as a one-point P/N sensor.
The electronic rack is connected to a PC which itself is linked with the host PC by an
Ethernet connection.
A simple TCP/IP based protocol is used to communicate measurement values and to
arm/disarm measurements.
技術參數
■ Wafer Sizes 125 + 156 mm
■ Square, Pseudo-Square, Round
■ 100mm (1 scan only)
■ Thickness 120 – 360 μm
■ Accuracy +/- 1 μm
■ Sensor Diameter 10 mm
■ Active Area 5.5 mm .
■ Distance from Edge 5.5 mm
■ Resistivity 0.2 – 30 Ohm*cm (thk.=240μm)
■ Sheet Resistance 8 – 1200 Ohm/square
■ Accuracy +/- 5 %
■ Sensor Diameter 18 mm
■ Active Area ca. 12 mm .
■ Distance from Edge 11 mm
■ Measuring Time 1 Sec./ Wafer
■ Belt speed 100 – 200 mm/s
■ Distance between Wafers > 30 mm
■ Power Voltage 100 – 240 VAC
■ Consumption 15 VA
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